jiangsu changji ang ele ctronics technology co., ltd to-92s plastic-encapsulate transistors t o -92s 1. emitter 2. collect or 3. base 2SD2470 transi st or (npn) features z low s aturation v olt age maximum ra tings (t a =2 5 unless other w ise noted) symbol para mete r value unit v cbo coll ector-bas e voltage 15 v v ce o coll ector-emitter v oltage 10 v v eb o emitter-base v o ltage 8 v i c coll ector curr ent ?continuous 5 a p c coll ector po wer dissipation 400 mw t j junctio n temperature 150 t st g s t orage temperature -55-150 electrical characteristics (t a =25 unless other w ise specified) parameter symbol test conditions m in typ max u nit co llecto r-base breakdown voltage v (b r)cb o i c =5 0 a , i e = 0 15 v co llecto r-emitter breakdown voltage v (b r)ce o i c =1 ma, i b = 0 10 v emitter-b a se breakdown voltage v ( br )ebo i e =5 0 a, i c =0 8 v co llecto r cut-off current i cb o v cb = 10v , i e = 0 0.1 a emitter cut-off current i ebo v eb =8 v , i c = 0 0.5 a dc cu rr ent gain h fe v ce =2 v , i c = 2a 270 820 co llecto r-emitter saturation voltage v ce (sa t) i c =3 a,i b = 0 .1a 0.5 v t r ansition frequency f t v ce =6 v , i c =50ma,f= 100 mhz 170 mhz co llecto r output capacitance c ob v cb = 10 v, i e =0 ,f = 1 mhz 30 pf j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com d ,aug ,2016 1 3 2
sy mb ol d imensions in millimeters dimensions in inches min. max. min. max. a 1.420 1.620 0.056 0.064 a1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 d 3.900 4.100 0.154 0.161 d1 2.280 2.680 0.090 0.106 e 3.050 3.250 0.120 0.128 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 15.100 15.500 0.594 0.610 45 typ. 45 typ. www.cj-elec.com 2 d,aug ,2016
www.cj-elec.com 3 d,aug ,2016
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